Title:
半導体記憶装置の製造方法
Document Type and Number:
Japanese Patent JP5650303
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor memory device that allows lowering cost by reducing steps of forming a resist by photolithography.SOLUTION: A method of manufacturing a semiconductor memory device comprises the steps of: forming select gate electrodes 4; forming gate isolation insulating films 5; forming first and second control gate electrodes 6a and 6b; forming first and second impurity regions 2a and 2b; and removing the gate isolation insulating films 5 on the select gate electrodes 4 and the first and second impurity regions 2a and 2b. In the step of forming the first and second impurity regions 2a and 2b, the second impurity regions 2b are formed so that the second impurity regions 2b adjacent in the column direction are connected to each other. In the formation step of the select gate electrodes 4, the select gate electrodes 4 are formed in a ring shape so as to surround the regions where the second impurity regions 2b are to be formed.
Inventors:
竹下 利章
Application Number:
JP2013224507A
Publication Date:
January 07, 2015
Filing Date:
October 29, 2013
Export Citation:
Assignee:
ルネサスエレクトロニクス株式会社
International Classes:
H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Asamichi Kato