Title:
強磁性積層構造の製造方法
Document Type and Number:
Japanese Patent JP5688526
Kind Code:
B2
Abstract:
A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG. 2(A) shows Si (100) plane, FIG. 2(B) MgO (100) plane, and FIG. 2(C) the state of these two planes being lattice-matched. Si (100) plane in FIG. 2(A) is constituted by Si atoms 111 alone, while MgO (100) plane in FIG. 2(B) is constituted by Mg atoms 121 and oxygen (O) atoms 122. MgO (100) plane is grown on Si (100) plane, and as shown in FIG. 2(C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.
Inventors:
鈴木 淑男
Application Number:
JP2010283253A
Publication Date:
March 25, 2015
Filing Date:
December 20, 2010
Export Citation:
Assignee:
秋田県
ＴＤＫ株式会社
ＴＤＫ株式会社
International Classes:
H01L29/82; H01L43/08
Attorney, Agent or Firm:
Ditch Shiroyuki
Yukihiko Maejima
Yukihiko Maejima