Title:
カルコゲニド含有デバイス用電極の形成方法
Document Type and Number:
Japanese Patent JP5689737
Kind Code:
B2
Abstract:
The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.
Inventors:
ダヴィデ，エルベッタ
カミッロ，ブレスリン
アンドレア，ゴッティ
カミッロ，ブレスリン
アンドレア，ゴッティ
Application Number:
JP2011103402A
Publication Date:
March 25, 2015
Filing Date:
May 06, 2011
Export Citation:
Assignee:
マイクロン テクノロジー， インク．
International Classes:
H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Yasuhisa Nomura
Yoshiyuki Osuge
Yoshiyuki Osuge