Title:
シリコン基板のエッチング方法および太陽電池の発電素子
Document Type and Number:
Japanese Patent JP5697554
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of etching a silicon substrate which achieves more uniform texture formation.SOLUTION: According to a method of etching a silicon substrate, the silicon substrate is etched by immersing the silicon substrate in a chemical tank filled with an etching chemical solution of an alkaline aqueous solution containing an additive agent that adheres to a surface of the silicon substrate and locally inhibits etching. The chemical tank can control the temperature of the etching chemical solution. The method of etching the silicon substrate includes: a first etching step of performing etching of the silicon substrate by setting the temperature of the etching chemical solution at a first temperature immediately after the silicon substrate is immersed in the etching chemical solution; and a second etching step of performing etching of the silicon substrate by setting the temperature of the etching chemical solution at a second temperature higher than the first temperature after the first etching step.
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Inventors:
Takashi Sawai
Yusuke Oshiro
Yusuke Oshiro
Application Number:
JP2011132396A
Publication Date:
April 08, 2015
Filing Date:
June 14, 2011
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/306; H01L31/18
Domestic Patent References:
| JP10303443A | ||||
| JP2010093194A | ||||
| JP2010141139A | ||||
| JP2005347339A | ||||
| JP2011515872A |
Attorney, Agent or Firm:
Hiroaki Sakai