Title:
多結晶シリコンの製造方法
Document Type and Number:
Japanese Patent JP5699060
Kind Code:
B2
Abstract:
In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is So. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S = So / 2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a < b < c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.
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Inventors:
Yasushi Kurosawa
Shigeyoshi Narazu
Hoshino Shigehiro
Shigeyoshi Narazu
Hoshino Shigehiro
Application Number:
JP2011204665A
Publication Date:
April 08, 2015
Filing Date:
September 20, 2011
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C01B33/03; C01B33/035
Domestic Patent References:
| JP5139891A | ||||
| JP2002241120A |
Foreign References:
| WO2010098319A1 | ||||
| WO2009128888A1 |
Attorney, Agent or Firm:
Seiji Ohno
Koji Morita
Kenichi Katayama
Koji Morita
Kenichi Katayama
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