Title:
半導体装置
Document Type and Number:
Japanese Patent JP5703362
Kind Code:
B2
Abstract:
An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.
Inventors:
Jun Koyama
Koji Dairiki
Okazaki recommendation
Moriya Yoshitaka
Shunpei Yamazaki
Koji Dairiki
Okazaki recommendation
Moriya Yoshitaka
Shunpei Yamazaki
Application Number:
JP2013239445A
Publication Date:
April 15, 2015
Filing Date:
November 20, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G06K19/077; H01L21/02; H01L21/76; H01L21/762; H01L27/12; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2005032979A | ||||
| JP2004282050A |