Title:
ウェハーの接合を強くするウェハーボンディングのための方法及び装置
Document Type and Number:
Japanese Patent JP5718235
Kind Code:
B2
Abstract:
An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer.
Inventors:
George, Gregory
Application Number:
JP2011536549A
Publication Date:
May 13, 2015
Filing Date:
November 16, 2009
Export Citation:
Assignee:
SUSS Micro-Tech, Lithography, Geembehr
International Classes:
H01L21/02
Domestic Patent References:
| JP3096216A | ||||
| JP2005302858A |
Attorney, Agent or Firm:
Takashi Shoji