Title:
複合基板上に成長された半導体発光デバイス
Document Type and Number:
Japanese Patent JP5734190
Kind Code:
B2
Abstract:
A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.
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Inventors:
McLaughlin Melvin Bee
Claims Michael Earl
Claims Michael Earl
Application Number:
JP2011527460A
Publication Date:
June 17, 2015
Filing Date:
September 21, 2009
Export Citation:
Assignee:
Philips Lumileds Lighting Company Limited Liability Company
KONINKLIJKE PHILIPS N.V.
KONINKLIJKE PHILIPS N.V.
International Classes:
H01L33/32; H01L33/38; H01L33/40
Domestic Patent References:
| JP2007096331A | ||||
| JP2007266589A | ||||
| JP2003142728A | ||||
| JP2008536319A | ||||
| JP2008153584A | ||||
| JP2008527721A | ||||
| JP2007529105A | ||||
| JP2004048067A | ||||
| JP2006005331A |
Attorney, Agent or Firm:
Patent Services Corporation m&s Partners
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