Title:
光電変換装置およびその製造方法、光電変換モジュール
Document Type and Number:
Japanese Patent JP5734512
Kind Code:
B2
Abstract:
A photoelectric conversion device includes an n-type semiconductor layer and a p-type semiconductor layer, a collecting electrode formed on the n-type semiconductor layer, and a collecting electrode formed on the p-type semiconductor layer, on a back surface opposite to a light receiving surface of an n-type crystalline silicon substrate, and an n-type semiconductor region on a surface on a light receiving surface side of the n-type crystalline silicon substrate, wherein in the n-type semiconductor region, an n-type semiconductor region that is opposed to the n-type semiconductor layer with the n-type crystalline silicon substrate therebetween and an n-type semiconductor region that is opposed to the p-type semiconductor layer with the n-type crystalline silicon substrate therebetween have different average impurity concentrations.
Inventors:
Hidetada Tokugawa
Takehiko Sato
Takehiko Sato
Application Number:
JP2014515512A
Publication Date:
June 17, 2015
Filing Date:
January 31, 2013
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L31/068; H01L31/0224; H01L31/0352
Domestic Patent References:
| JP2010258043A | 2010-11-11 | |||
| JP2010147324A | 2010-07-01 | |||
| JP2011035092A | 2011-02-17 | |||
| JP2005101427A | 2005-04-14 | |||
| JP2013125890A | 2013-06-24 | |||
| JP2013115262A | 2013-06-10 | |||
| JP2013197538A | 2013-09-30 |
Attorney, Agent or Firm:
Hiroaki Sakai