Title:
錯体化合物、半導体層形成用原料、半導体層の製造方法および光電変換装置の製造方法
Document Type and Number:
Japanese Patent JP5744312
Kind Code:
B2
Inventors:
Hiromitsu Ogawa
Application Number:
JP2014502306A
Publication Date:
July 08, 2015
Filing Date:
February 27, 2013
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
C07F19/00; C01G19/00; H01L21/368; H01L31/072; H01L31/18
Foreign References:
| WO2011016283A1 | ||||
| WO2010098369A1 |
Other References:
Japanese Journal of Applied Physics,2005年,Vol. 44, No. 1B,783-787