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Title:
テラヘルツ電磁波変換装置
Document Type and Number:
Japanese Patent JP5747420
Kind Code:
B2
Abstract:
The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This terahertz electromagnetic wave conversion device has an HEMT structure having a substrate (201), an electron transit layer (202), an electron supply layer (203), a source (204) and a drain (205), and comprises a first group of gates (G1) and a second group of gates (G2). The gate length (L1) of each finger of the first group of gates (G1) is narrower than the gate length (L2) of each finger of the second group of gates (G2), and each finger of each group of gates is disposed between the source (204) and the drain (205) on the same cycle (W). A first distance (D1) and a second distance (D2) from each finger of the first group of gates (G1) to two fingers of the second group of gates (G2) adjacent to each finger are unequal lengths.

Inventors:
Taiichi Otsuji
Popov Vice Slav
Knap Wai Cheek
Methani Yaya Mubarak
Diaconova Nina
Kokira Dominique
Teppe Frederik
Fatif Dennis
Velazquez Perez Ssu Enrique
Application Number:
JP2012546581A
Publication Date:
July 15, 2015
Filing Date:
December 03, 2010
Export Citation:
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Assignee:
Tohoku University
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE(CNRS)
Université Montpellier 2
International Classes:
H01L31/14
Domestic Patent References:
JP2009224467A2009-10-01
Foreign References:
WO2006030608A12006-03-23
WO2006030608A12006-03-23
Other References:
JPN6014038717; D.Coquillat: '"Room temperature detection of sub-terahertz radiation in double-grating-gate transistors"' Optics Express Vol.18, No.6 (2010), p.6024-6032
JPN6014038718; D.Coquillat: '"Terahertz detection in a double-grating-gate heterotransistor"' Journal of Physics Conference Series, 2009, Vol.193, 012074
JPN6014038719; I.Khmyrova: '"Analysis of terahertz plasma resonances in structures with two-dimensional electron systems periodi' Journal of Applied Physics Vol.108, No.7 (2010), 074511
JPN6014038720; T.Nishimura: '"An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resona' Japanese Journal of Applied Physics Vol.49, No.5 (2010), 054301
JPN6014038721; Y.M.Meziani: '"Room temperature generation of terahertz radiation from dual grating gate HEMT's"' 33rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2008 , p.1-2
JPN6014038717; D.Coquillat: '"Room temperature detection of sub-terahertz radiation in double-grating-gate transistors"' Optics Express Vol.18, No.6 (2010), p.6024-6032
JPN6014038718; D.Coquillat: '"Terahertz detection in a double-grating-gate heterotransistor"' Journal of Physics Conference Series, 2009, Vol.193, 012074
JPN6014038719; I.Khmyrova: '"Analysis of terahertz plasma resonances in structures with two-dimensional electron systems periodi' Journal of Applied Physics Vol.108, No.7 (2010), 074511
JPN6014038720; T.Nishimura: '"An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resona' Japanese Journal of Applied Physics Vol.49, No.5 (2010), 054301
JPN6014038721; Y.M.Meziani: '"Room temperature generation of terahertz radiation from dual grating gate HEMT's"' 33rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2008 , p.1-2
Attorney, Agent or Firm:
Patent Business Corporation Tani/Abe Patent Office