Title:
横型ＨＥＭＴ
Document Type and Number:
Japanese Patent JP5766740
Kind Code:
B2
Abstract:
A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate. Furthermore, the lateral HEMT has a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer. In addition, the lateral HEMT has a third layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type, and is arranged at least partially in the first layer.
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Inventors:
Franz, Harrah
Walter, Reggae
Marx, Thundel
Walter, Reggae
Marx, Thundel
Application Number:
JP2013079755A
Publication Date:
August 19, 2015
Filing Date:
April 05, 2013
Export Citation:
Assignee:
Infineon Technologies Austria Akgen Gezelshaft
International Classes:
H01L21/337; H01L21/336; H01L21/338; H01L27/095; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| JP2006507683A | ||||
| JP2009004398A | ||||
| JP2006351691A | ||||
| JP2007537594A | ||||
| JP2009164158A | ||||
| JP56080183A | ||||
| JP2008258419A | ||||
| JP2009009993A |
Attorney, Agent or Firm:
Harakenzo world patent & trademark