Title:
紫外線受光素子及びそれらの製造方法
Document Type and Number:
Japanese Patent JP5779005
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To facilitate manufacture of a semiconductor ultraviolet light-receiving element.SOLUTION: The ultraviolet light-receiving element includes an insulating substrate, a first MgZnO (0
Inventors:
Hiroyuki Kato
Yoshihiro Nakamura
Yoshihiro Nakamura
Application Number:
JP2011133356A
Publication Date:
September 16, 2015
Filing Date:
June 15, 2011
Export Citation:
Assignee:
Stanley Electric Co., Ltd.
International Classes:
H01L31/108
Domestic Patent References:
| JP2009260003A | ||||
| JP2008283132A |
Other References:
Y.F.Li,"Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range",Journal of Physics D : Applied Physics,Vol.42, No.10 (2009),105102
Attorney, Agent or Firm:
Keishiro Takahashi
Mikio Kuruyama
Ukai Shinichi
Adachi Nobuhiro
Mikio Kuruyama
Ukai Shinichi
Adachi Nobuhiro