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Title:
ソルボサーマル法を用いるCu,Zn,Sn及びSを含有する硫化物系化合物半導体ナノ粒子の製造方法
Document Type and Number:
Japanese Patent JP5788832
Kind Code:
B2
Abstract:
The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

Inventors:
Junsei Kamiya
Keisuke Kinoshita
Yanagisawa Kazudo
Tao Hai Jun
Application Number:
JP2012114566A
Publication Date:
October 07, 2015
Filing Date:
May 18, 2012
Export Citation:
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Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
National University Corporation Kochi University
International Classes:
C01G19/00
Domestic Patent References:
JP2008056552A
Foreign References:
WO2011030055A1
WO2010098369A1
WO2011051012A1
Other References:
Y. ZHOU et al.,Sphere-like kesterite Cu2ZnSnS4 nanoparticles synthesized by a facile solvothermal method,Materials Letters,2011年 6月15日,Vol.65, No.11,p.1535-1537
M. CAO et al.,A mild solvothermal route to kesterite quaternary Cu2ZnSnS4 nanoparticles,Journal of Crystal Growth,2011年 3月 1日,Vol.318, No.1,p.1117-1120
C. STEINHAGEN et al.,Synthesis of Cu2ZnSnS4 Nanocrystals for Use in Low-Cost Photovoltaics,Journal of the American Chemical Society,2009年 9月 9日,Vol.131, No.35,p.12554-12555
C. P. CHAN et al.,GROWTH OF COPPER ZINC TIN SULFIDE NANO-RODS BY ELECTRODEPOSITION USING ANODIZED ALUMINUM AS THE GROWTH MASK,Journal of Nonlinear Optical Physics and Materials,2009年12月31日,Vol.18, No.4,p.599-603
Attorney, Agent or Firm:
Yusuke Hiraki
Satoshi Fujita
Naomi Shimamura