Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5825201
Kind Code:
B2
Abstract:
In a semiconductor device, a trench includes a first trench that has an opening portion on a surface of a base layer, and a second trench that is communicated with the first trench and in which a distance between opposed side walls is greater than opposed side walls of the first trench and a bottom portion is located in a drift layer. A wall surface of a connecting portion of the second trench connecting to the first trench is rounded. Therefore, an occurrence of a large electrical field concentration in the vicinity of the connecting portion between the first trench and the second trench can be suppressed. Also, when electrons are supplied from a channel region to the drift layer, it is less likely that a flow direction of the electrons will be sharply changed in the vicinity of the connecting portion. Therefore, an on-state resistance can be reduced.
Inventors:
Kazuki Arakawa
Sumitomo Masayoshi
Masaki Matsui
Higuchi Anshi
Kazuhiro Koyama
Sumitomo Masayoshi
Masaki Matsui
Higuchi Anshi
Kazuhiro Koyama
Application Number:
JP2012126006A
Publication Date:
December 02, 2015
Filing Date:
June 01, 2012
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L21/336; H01L29/78; H01L29/739
Domestic Patent References:
| JP2006324488A | ||||
| JP2001244325A | ||||
| JP2002237593A | ||||
| JP2010258252A | ||||
| JP11195784A | ||||
| JP2008060138A | ||||
| JP2013251397A |
Foreign References:
| US20080179666 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office
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