Title:
高純度銅コバルト合金スパッタリングターゲット
Document Type and Number:
Japanese Patent JP5837202
Kind Code:
B2
Abstract:
A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at% of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 µm or less, and a number of precipitates is 500 precipitates/mm 2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.
Inventors:
Kenichi Nagata
Otsuki Tomio
Otsuki Tomio
Application Number:
JP2014527097A
Publication Date:
December 24, 2015
Filing Date:
February 19, 2014
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; C22C9/06; C22F1/08
Domestic Patent References:
| JPH1150242A | 1999-02-23 | |||
| JP2003342653A | 2003-12-03 | |||
| JP2006131925A | 2006-05-25 | |||
| JPH1150242A | 1999-02-23 | |||
| JP2003342653A | 2003-12-03 | |||
| JP2006131925A | 2006-05-25 |
Foreign References:
| US20120270068A1 | 2012-10-25 | |||
| US20120270068A1 | 2012-10-25 |
Attorney, Agent or Firm:
Isamu Ogoshi
Ikki Kogoshi
Ikki Kogoshi