Title:
半導体装置
Document Type and Number:
Japanese Patent JP5852718
Kind Code:
B2
Abstract:
An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.
Inventors:
Hiromitsu Goto
Takuyuki Inoue
Takuyuki Inoue
Application Number:
JP2014182906A
Publication Date:
February 03, 2016
Filing Date:
September 09, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/8238; H01L27/08; H01L27/092
Domestic Patent References:
| JP2007096055A | ||||
| JP2002518844A |
Foreign References:
| US5612228 |