Title:
多結晶シリコン製造方法
Document Type and Number:
Japanese Patent JP5854113
Kind Code:
B2
Abstract:
A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a polycrystalline silicon reactor 1 which applies an electric current to a silicon seed rod 4 provided within a furnace, thereby heating the silicon seed rod 4, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod 4, the reactor includes, at a bottom plate 2 (furnace bottom) of the furnace, an electrode holder 10 provided so as to be electrically insulated from the bottom plate 2 (furnace bottom), and a seed rod holding electrode 15 connected to the electrode holder 10, and holding the silicon seed rod 4 toward the upside. Concavo-convex portions (male thread portion) 15B exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode 15.
Inventors:
Toshihide Endo
Masayuki
Toshiyuki Ishii
Sakaguchi Masaaki
Masayuki
Toshiyuki Ishii
Sakaguchi Masaaki
Application Number:
JP2014227025A
Publication Date:
February 09, 2016
Filing Date:
November 07, 2014
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C01B33/035
Domestic Patent References:
| JP2007107030A | ||||
| JP2002338226A |
Attorney, Agent or Firm:
Masakazu Aoyama