フォトダイオードを作製するための方法 - INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)

Title:

フォトダイオードを作製するための方法

Document Type and Number:

Japanese Patent JP5858790

Kind Code:

B2

Abstract:

A photodiode capable of interacting with incident photons includes at least: a stack of three layers including an intermediate layer placed between a first semiconductor layer and a second semiconductor layer having a first conductivity type; and a region that is in contact with at least the intermediate layer and the second layer and extends transversely relative to the planes of the three layers, the region having a conductivity type that is opposite to the first conductivity type. The intermediate layer is made of a semiconductor material having a second conductivity type and is capable of having a conductivity type that is opposite to the second conductivity type so as to form a P-N junction with the region, inversion of the conductivity type of the intermediate layer being induced by dopants of the first conductivity type that are present in the first and second layers.

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Inventors:

Joan Rothman

Application Number:

JP2011546916A

Publication Date:

February 10, 2016

Filing Date:

January 26, 2010

Export Citation:

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