Title:
裏面照射型画像センサの反射防止層
Document Type and Number:
Japanese Patent JP5875053
Kind Code:
B2
Abstract:
A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method includes depositing a metal oxide anti-reflection laminate on the first surface of the substrate. The metal oxide anti-reflection laminate includes one or more composite layers of thin metal oxides stacked over the photodiode. Each composite layer includes two or more metal oxide layers: one metal oxide is a high energy band gap metal oxide and another metal oxide is a high refractive index metal oxide.
Inventors:
Hayashi Anren
Du Yurin
Cai Masahara
Kure Masatatsu
Cai Yoshio
Du Yurin
Cai Masahara
Kure Masatatsu
Cai Yoshio
Application Number:
JP2013084112A
Publication Date:
March 02, 2016
Filing Date:
April 12, 2013
Export Citation:
Assignee:
Taiwan Semiconductor Manufacturing Company,Ltd.
International Classes:
H01L27/14; H01L27/146; H04N5/369
Domestic Patent References:
| JP2007258684A | ||||
| JP2010186818A | ||||
| JP2005099513A | ||||
| JP63139302A |
Attorney, Agent or Firm:
Asahina Patent Office