Title:
半導体装置
Document Type and Number:
Japanese Patent JP5876284
Kind Code:
B2
Abstract:
A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlled is connected through its back gate. This structure allows the application of desired voltage to the back gate so that the threshold voltage of the transistor is controlled at an optimal level and can be held for a long time. A second capacitor connected in parallel with the diode is optionally provided so that the voltage of the node can be changed temporarily.
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Inventors:
Masami Endo
Kazuaki Oshima
Kazuaki Oshima
Application Number:
JP2011277023A
Publication Date:
March 02, 2016
Filing Date:
December 19, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; G02F1/133; G02F1/1345; G02F1/1368; H01L21/336; H01L21/822; H01L21/8234; H01L21/8244; H01L21/8247; H01L27/04; H01L27/088; H01L27/10; H01L27/105; H01L27/108; H01L27/11; H01L27/115; H01L29/786; H01L29/788; H01L29/792
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