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Title:
半導体層の製造方法、光電変換装置の製造方法および半導体層形成用液
Document Type and Number:
Japanese Patent JP5922348
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture a semiconductor layer containing a group I-II-IV-VI compound by a simple method.SOLUTION: A method for manufacturing a semiconductor layer comprises the steps of: forming a film using a semiconductor layer forming liquid containing a first complex compound represented by structural formula (1) and a group IV-B element; and heating the film to form it into a semiconductor layer containing a group I-II-IV-VI compound.

Inventors:
Hiromitsu Ogawa
Application Number:
JP2011161774A
Publication Date:
May 24, 2016
Filing Date:
July 25, 2011
Export Citation:
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Assignee:
Kyocera Corporation
International Classes:
H01L21/368; H01L31/072; H01L31/18
Domestic Patent References:
JP2013501381A
JP2012527401A
Foreign References:
WO2011017235A2
WO2011016283A1
WO2013002057A1
WO2011013657A1