Title:
半導体光変調器
Document Type and Number:
Japanese Patent JP5924036
Kind Code:
B2
Abstract:
A semiconductor optical modulator includes a first n-type semiconductor region, a first p-type semiconductor region, an i-type semiconductor region, a second p-type semiconductor region, and a second n-type semiconductor region that constitute a stacked layer structure. The stacked layer structure includes a first cladding layer, a second cladding layer, and a core layer disposed between the first and second cladding layer. The first n-type semiconductor region and the first p-type semiconductor region form a first p-n junction disposed in an intermediate region between the first and second cladding layer. The second p-type semiconductor region and the second n-type semiconductor region form a second p-n junction disposed in the intermediate region or the second cladding layer. The intermediate region, the first n-type semiconductor region, and the second n-type semiconductor region include the core layer, the first cladding layer, and part or all of the second cladding layer, respectively.
Inventors:
Naoya Kono
Application Number:
JP2012051542A
Publication Date:
May 25, 2016
Filing Date:
March 08, 2012
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
G02F1/025
Domestic Patent References:
| JP2005099387A | ||||
| JP2011203382A |
Other References:
F. Devaux, et al.,"Proposal and Demonstration of a Symmetrical npipn Electroabsorption Modulator",IEEE Photonics Technology Letters,1995年 7月,Vol.7, No.7,pp.748-750
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichira Kondo
Yoshiki Kuroki
Ichira Kondo