Title:
半導体装置
Document Type and Number:
Japanese Patent JP5933291
Kind Code:
B2
Abstract:
A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a resonance circuit with the antenna and the capacitor by being electrically connected to the antenna and the capacitor in parallel, a first field effect transistor controlling whether the passive element is electrically connected to the antenna and the capacitor in parallel or not, and a memory circuit. The memory circuit includes a second field effect transistor which includes an oxide semiconductor layer where a channel is formed and in which a data signal is input to one of a source and a drain. The gate voltage of the first field effect transistor is set depending on the voltage of the other of the source and the drain of the second field effect transistor.
Inventors:
Seiichi Yoneda
Application Number:
JP2012039769A
Publication Date:
June 08, 2016
Filing Date:
February 27, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G06K19/07; G06K7/10; H01L21/8242; H01L27/10; H01L27/108; H01L29/786
Domestic Patent References:
| JP2006238398A | ||||
| JP2008181499A | ||||
| JP2010085328A | ||||
| JP2010103340A |
Foreign References:
| US20100072285 |