Title:
ε-Ga2O3単結晶、ε-Ga2O3の製造方法、および、それを用いた半導体素子
Document Type and Number:
Japanese Patent JP6436538
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide ε-GaOsingle crystal applicable to a semiconductor element, a production method of ε-GaO, and a semiconductor element using the same.SOLUTION: In ε-GaOsingle crystal, a carbon concentration is controlled to be 5×10cmor lower. A production method of ε-GaOincludes a step for growing ε-GaOon a substrate by a halide vapor phase growth method. The substrate is a single crystal substrate having a space group P63mc, or a single crystal substrate comprising β-GaO.SELECTED DRAWING: Figure 6
Inventors:
Yuichi Oshima
Francisco Garcia Villora
Francisco Garcia Villora
Francisco Garcia Villora
Francisco Garcia Villora
Application Number:
JP2015121248A
Publication Date:
December 12, 2018
Filing Date:
June 16, 2015
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
C30B29/16; C30B25/20
Domestic Patent References:
| JP2014234337A | ||||
| JP2013028480A | ||||
| JP2002093243A |
Foreign References:
| WO2015046006A1 |
Other References:
SUXIANG Ge et al.,Phase controllable synthesis of unusual ε-Ga2O3 single crystals with promising luminescence property,Solid State Sciences,2009年 6月24日,vol.11,pp.1592-1596
RUSTUM.ROY et al.,Polymorphism of Ga2O3 and the System Ga2O3-H2O,J.Amer.Chem.Soc,1952年 2月 5日,vol.74,pp.719-722
RUSTUM.ROY et al.,Polymorphism of Ga2O3 and the System Ga2O3-H2O,J.Amer.Chem.Soc,1952年 2月 5日,vol.74,pp.719-722
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