Title:
内蔵フラッシュメモリデバイス用の改良された電力シーケンシング
Document Type and Number:
Japanese Patent JP6500095
Kind Code:
B2
Abstract:
A system and method for improved power sequencing within an embedded flash memory device is disclosed.
Inventors:
Tran Hugh Van
Vu Touan
Lee Ain
Nguyen Hung Quoc
Vu Touan
Lee Ain
Nguyen Hung Quoc
Application Number:
JP2017515673A
Publication Date:
April 10, 2019
Filing Date:
May 03, 2015
Export Citation:
Assignee:
SILICON STORAGE TECHNOLOGY, INC.
International Classes:
G11C16/30; G06F1/26; G11C5/14
Domestic Patent References:
| JP200712134A | ||||
| JP1195877A | ||||
| JP2014532953A |
Attorney, Agent or Firm:
Takaki Nishijima
Disciple Maru Ken
Shinichiro Tanaka
Fumiaki Otsuka
Hiroyuki Suda
Hiroshi Uesugi
Naoki Kondo
Disciple Maru Ken
Shinichiro Tanaka
Fumiaki Otsuka
Hiroyuki Suda
Hiroshi Uesugi
Naoki Kondo