Title:
半導体装置
Document Type and Number:
Japanese Patent JP6562359
Kind Code:
B2
Abstract:
A semiconductor device includes: a first semiconductor layer stacked body including a compound semiconductor; a first field-effect transistor element including a first drain electrode, a first source electrode, and a first gate electrode that are provided on the first semiconductor layer stacked body; a second semiconductor layer stacked body including a compound semiconductor; and a second field-effect transistor element including a second drain electrode, a second source electrode, and a second gate electrode that are provided on the second semiconductor layer stacked body. The second gate electrode forms a Schottky junction or a p-n junction with the second semiconductor layer stacked body, the second drain electrode is connected to the first drain electrode, the second source electrode is connected to the first gate electrode, and the second gate electrode is connected to the first source electrode.
More Like This:
Inventors:
Takahori Ohori
Hayashi Masashi
Manabu Yanagihara
Hayashi Masashi
Manabu Yanagihara
Application Number:
JP2016529015A
Publication Date:
August 21, 2019
Filing Date:
June 10, 2015
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/337; H01L21/336; H01L21/338; H01L21/822; H01L21/8232; H01L27/04; H01L27/06; H01L27/08; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| JP2011165749A | ||||
| JP2009259972A | ||||
| JP63303514A | ||||
| JP5251472A | ||||
| JP59181560A | ||||
| JP62211954A |
Attorney, Agent or Firm:
Hiromori Arai
Eisaku Teratani
Shinichi Michisaka
Eisaku Teratani
Shinichi Michisaka