Title:
パルスプラズマ暴露を伴うプラズマ原子層堆積
Document Type and Number:
Japanese Patent JP6562629
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide techniques of forming a uniform film on an uneven face of a semiconductor substrate having patterns.SOLUTION: While operation of plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasma, pulsed plasma is utilized to achieve a film with high quality sidewalls. The increased sidewall quality corresponds to a film that is overall more uniform in quality.
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Inventors:
James S. Sims
John Henry
Kathryn M. Kelfner
Satish Bab S.V.Janjam
Shane Tan
John Henry
Kathryn M. Kelfner
Satish Bab S.V.Janjam
Shane Tan
Application Number:
JP2014262248A
Publication Date:
August 21, 2019
Filing Date:
December 25, 2014
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/31; C23C16/42; C23C16/455; C23C16/515; H01L21/316; H01L21/318; H05H1/46
Domestic Patent References:
| JP2010539730A | ||||
| JP2012506640A | ||||
| JP2010530127A | ||||
| JP2008522405A | ||||
| JP2008306093A | ||||
| JP2013196822A | ||||
| JP2013240042A | ||||
| JP2013102130A |
Foreign References:
| US20020153101 | ||||
| US20110198756 | ||||
| US20120074844 |
Attorney, Agent or Firm:
Meisei International Patent Office