Title:
光電変換装置
Document Type and Number:
Japanese Patent JP6599769
Kind Code:
B2
Abstract:
There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).
More Like This:
Inventors:
Kenji Kimoto
Koide Naojo
Zhou Yanmin
Masamichi Kobayashi
Koide Naojo
Zhou Yanmin
Masamichi Kobayashi
Application Number:
JP2015543927A
Publication Date:
October 30, 2019
Filing Date:
October 24, 2014
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L31/0224; H01L31/0747
Domestic Patent References:
| JP2005101240A | ||||
| JP2010129872A | ||||
| JP2012164961A | ||||
| JP2013513966A |
Foreign References:
| US20130269771 | ||||
| WO2013030993A1 | ||||
| WO2009154137A1 | ||||
| WO2011077963A1 |
Attorney, Agent or Firm:
Kawakami Keiko
Takao Matsuyama
Takao Matsuyama