Title:
半導体装置
Document Type and Number:
Japanese Patent JP6604430
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type drift region and a second conductivity type base region above the drift region, trench portions at an upper surface of the semiconductor substrate arrayed parallel to one another, each of them penetrating the base region, and mesa portions between respective trench portions. Among the mesa portions, at least one mesa portion includes a first conductivity type first semiconductor region having a higher concentration than the drift region, a second conductivity type second semiconductor region having a higher concentration than the base region, and a first conductivity type accumulation region between the base and drift regions and has a higher concentration than the drift region. The drift region does not extend above the accumulation region. In a longitudinal direction of the trench portions, the accumulation region extends beyond an end portion of the first semiconductor region.
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Inventors:
Tatsuya Naito
Application Number:
JP2018504624A
Publication Date:
November 13, 2019
Filing Date:
March 10, 2017
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JP2014103376A | ||||
| JP2013080796A | ||||
| JP2012043890A | ||||
| JP2009272550A |
Foreign References:
| WO2013030943A1 | ||||
| WO2016030966A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation