Title:
半導体装置
Document Type and Number:
Japanese Patent JP6621989
Kind Code:
B2
Abstract:
The power consumption of a semiconductor device that can function as a latch circuit or the like is reduced. The semiconductor device includes a first circuit and a switch that controls conduction between an input terminal and the first circuit. The first circuit includes n second circuits (n is an integer of 2 or more) and a variable resistor. An output node of any of the n second circuits is electrically connected to an input node of the second circuit in a first stage through the variable resistor. The variable resistor can be, for example, a transistor whose channel is formed in an oxide semiconductor layer. A reduction in the number of elements or signals leads to a reduction of the power consumption of the semiconductor device.
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Inventors:
Uesugi Wataru
Yukio Maebashi
Yukio Maebashi
Application Number:
JP2015002210A
Publication Date:
December 18, 2019
Filing Date:
January 08, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K3/356; G11C11/41; G11C11/412; H01L21/8238; H01L21/8244; H01L27/088; H01L27/092; H01L27/10; H01L27/11; H01L29/786; H03K3/037
Domestic Patent References:
| JP2005523625A | ||||
| JP200650208A | ||||
| JP2002541631A | ||||
| JP2012257207A | ||||
| JP201362014A |