Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP6665664
Kind Code:
B2
Abstract:
A semiconductor device includes a heat-dissipating base, a first conductive layer bonded to the top surface of the heat-dissipating base, an AlN insulating substrate bonded to the top surface of the first conductive layer, and an electrode terminal having one edge bending to form a bonding edge whose bottom surface faces the top surface of the second conductive layer and is solid-state bonded to a portion of the top surface of the second conductive layer. The crystal grain diameter at the bonded interface of the second conductive layer and electrode terminal is less than or equal to 1 μm, and indentations from the ultrasonic horn are left in the top surface of the bonding edge.
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Inventors:
Fumiko Momose
Genyuki Nogawa
Yoshitaka Nishimura
Eiji Mochizuki
Genyuki Nogawa
Yoshitaka Nishimura
Eiji Mochizuki
Application Number:
JP2016089818A
Publication Date:
March 13, 2020
Filing Date:
April 27, 2016
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
B23K20/10; H01L25/07; H01L21/60; H01L21/607; H01L23/12; H01L23/36; H01L25/18
Domestic Patent References:
| JP2015056412A | ||||
| JP2006049456A | ||||
| JP2013051366A | ||||
| JP2002164461A |
Foreign References:
| WO2014175343A1 | ||||
| US20150380368 | ||||
| CN105190858A | ||||
| US20130049201 | ||||
| CN102969306A |
Attorney, Agent or Firm:
Ichi Hirose
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