Title:
電力用半導体装置
Document Type and Number:
Japanese Patent JP6667712
Kind Code:
B2
Abstract:
An n-type semiconductor layer has a single-crystal structure and is made of a wide-gap semiconducting material. A p-type semiconductor layer is provided on the n-type semiconductor layer and made of a material different from the aforementioned wide-gap semiconducting material, and has either a microcrystalline structure or an amorphous structure. An electrode is provided on at least one of the n-type semiconductor layer and the p-type semiconductor layer.
Inventors:
Tatsuro Watabiki
Yuhei Yuda
Akihiko Furukawa
Shinsuke Miyajima
Yuki Takiguchi
Yuhei Yuda
Akihiko Furukawa
Shinsuke Miyajima
Yuki Takiguchi
Application Number:
JP2019500059A
Publication Date:
March 18, 2020
Filing Date:
February 14, 2017
Export Citation:
Assignee:
Mitsubishi Electric Corporation
National University Corporation Tokyo Institute of Technology
National University Corporation Tokyo Institute of Technology
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/41; H01L29/47; H01L29/861; H01L29/868
Domestic Patent References:
| JP2012216780A | ||||
| JP2016111253A |
Foreign References:
| WO2016075927A1 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita