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Patent Searching and Data


Title:
超伝導デバイスの製造方法
Document Type and Number:
Japanese Patent JP6740472
Kind Code:
B2
Abstract:
A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a junction material stack over the base electrode, forming a hardmask over the junction material stack, etching away a portion of the junction material stack to form a Josephson junction (JJ) over the base electrode, and depositing a second dielectric layer over the hardmask, the JJ, the base electrode and the first dielectric layer. The method additionally comprises forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and forming a second contact through the second dielectric layer and the hardmask to electrically coupled the second contact to a second end of the JJ.

Inventors:
Kirby, Christopher F.
Lenny, Michael
O'Donnell, Daniel Jay.
Application Number:
JP2019521826A
Publication Date:
August 12, 2020
Filing Date:
October 26, 2017
Export Citation:
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Assignee:
NORTHROP GRUMMAN SYSTEMS CORPORATION
International Classes:
H01L39/24
Domestic Patent References:
JP2002299705A
JP2012519379A
JP2002043640A
JP3190289A
JP6334231A
JP2015511067A
Attorney, Agent or Firm:
Makoto Onda
Hironobu Onda
Atsushi Honda