Title:
半導体記憶装置
Document Type and Number:
Japanese Patent JP6746522
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor memory device includes a first memory cell including a first transistor and a first capacitor, a second memory cell including a second transistor and a second capacitor, a first word line electrically coupled to the first transistor, a second word line electrically coupled to the second transistor, and a first circuit which supplies a first voltage to the first word line, and a second voltage different from the first voltage to the second word line, during a sleep mode.
Inventors:
Keiji Ikeda
Chika Tanaka
Toshinori Numata
Tsutomu Tezuka
Chika Tanaka
Toshinori Numata
Tsutomu Tezuka
Application Number:
JP2017052652A
Publication Date:
August 26, 2020
Filing Date:
March 17, 2017
Export Citation:
Assignee:
Kioxia Co., Ltd.
International Classes:
G11C11/4096; G11C11/406; G11C11/408
Domestic Patent References:
| JP2015170379A | ||||
| JP2001043677A | ||||
| JP2012089182A | ||||
| JP2016015185A | ||||
| JP5109268A |
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken