Title:
微量金属分析のための半導体ウェハの気相エッチングのための方法
Document Type and Number:
Japanese Patent JP6754842
Kind Code:
B2
Abstract:
Method and apparatus for etching the surface of a semiconductor wafer lying on a rotatable plate within an etching chamber whereby the homogeneous etching of the surface is obtained by introducing an etching gas into the etching chamber in such way, that the flow of the etching gas is not directed directly to the wafer but is allowed first to distribute within the etching chamber before getting into contact with the surface of the semiconductor wafer to be etched.
Inventors:
Herzrubimer, Franz
Application Number:
JP2018548049A
Publication Date:
September 16, 2020
Filing Date:
March 23, 2017
Export Citation:
Assignee:
Siltronic AG
International Classes:
H01L21/302
Domestic Patent References:
| JP2003347229A | ||||
| JP2008130696A | ||||
| JP2011129831A |
Foreign References:
| WO2011083719A1 |
Attorney, Agent or Firm:
Fukami patent office