Title:
フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
Document Type and Number:
Japanese Patent JP6767735
Kind Code:
B2
Abstract:
The invention provides a photomask which is capable of forming a resist pattern of an advantageous shape upon pattern transfer and exhibits excellent transferability, a method of manufacturing a photomask, a method of designing a photomask, a photomask blank, and a method of manufacturing a display device. The photomask has a transfer pattern formed on a transparent substrate. The transfer pattern includes a patterned phase shift film. The transfer pattern has a phase shift portion where the phase shift film is formed on the transparent substrate, and a light transmitting portion where the transparent substrate is exposed. Assuming that a phase shift amount (degree) of the phase shift film with respect to g-ray is [Phi]g, a phase shift amount (degree) of the phase shift film with respect to h-ray is [Phi]h, and a phase shift amount (degree) of the phase shift film with respect to i-ray is [Phi]i, [Phi]i > [Phi]g is satisfied and, among [Phi]g, [Phi]h, and [Phi]i, [Phi]g has a value nearest to 180 degrees.
Inventors:
Shuhei Kobayashi
Application Number:
JP2015130976A
Publication Date:
October 14, 2020
Filing Date:
June 30, 2015
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/28; G03F1/32
Domestic Patent References:
| JP2014126835A | ||||
| JP2015200719A |
Attorney, Agent or Firm:
Patent business corporation Tsukuni