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Title:
太陽電池の活性層材
Document Type and Number:
Japanese Patent JP6767750
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor material with a small bandgap exhibiting strong light absorption properties.SOLUTION: By mixing a hexaazatriphenylene (HAT) derivative and a copper halide (CuX), a semiconductor material of [CumXm{HAT-(CN)6}]n is produced. By using copper bromide for the copper halide, a solar cell having a layer configuration of glass/ITO/PEDOT:PSS/[CumBrm{HAT-(CN)6}]n/C60/BCP/Ag is formed.SELECTED DRAWING: Figure 15

Inventors:
Takashi Okubo
Kenji Nakatani
Kento Himoto
Yuki Kono
Kazuki Takeda
Maekawa Masahiko
Takayoshi Kuroda
Application Number:
JP2016026853A
Publication Date:
October 14, 2020
Filing Date:
February 16, 2016
Export Citation:
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Assignee:
Kinki University
International Classes:
H01L51/46
Domestic Patent References:
JP2012530762A
JP2010270113A
Foreign References:
US20120045862
WO2015000763A1
WO2012117860A1
Attorney, Agent or Firm:
Masaki Hiroyuki