Title:
半導体装置
Document Type and Number:
Japanese Patent JP6773577
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an art capable of inhibiting variation in barrier height of a Schottky contact face.SOLUTION: A semiconductor device comprises: a Si-containing semiconductor substrate; trenches; gate insulation films; gate electrodes arranged in respective trenches; an interlayer insulation film which covers top faces of the gate electrodes; a Ti-containing barrier metal layer which covers a top face of the semiconductor substrate; and an AlSi electrode which covers a top face of the barrier metal layer. The semiconductor substrate includes: an n type emitter region; a p type body region; an n type drift region; and an n type pillar region which pierces the body region from the top face of the semiconductor substrate to reach the drift region. There is a clearance formed between the barrier metal layer and the interlayer insulation film and the barrier metal layer contacts the emitter region and has an opening on the pillar region; and the AlSi electrode contacts the top face of the semiconductor substrate and forms a Schottky contact with the pillar region in the opening.SELECTED DRAWING: Figure 2
Inventors:
Soeno Akitaka
Hiroki Tsuma
Kuno Takashi
Kenta Hashimoto
Hiroki Tsuma
Kuno Takashi
Kenta Hashimoto
Application Number:
JP2017017086A
Publication Date:
October 21, 2020
Filing Date:
February 01, 2017
Export Citation:
Assignee:
トヨタ自動車株式会社
株式会社デンソー
株式会社デンソー
International Classes:
H01L29/78; H01L29/47; H01L29/872
Domestic Patent References:
| JP2014157896A | ||||
| JP2014030018A | ||||
| JP2010272766A | ||||
| JP2001007351A | ||||
| JP60117771A | ||||
| JP2015216200A | ||||
| JP2016201498A |
Attorney, Agent or Firm:
Kaiyu International Patent Office