Title:
半導体装置
Document Type and Number:
Japanese Patent JP6785543
Kind Code:
B2
Abstract:
A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential. The second circuits each include a first pass transistor and a second pass transistor which are electrically connected in series, a first memory circuit, and a second memory circuit. The first and second memory circuits each have a function of making a potential retention node in an electrically floating state. The potential retention nodes of the first and second memory circuits are electrically connected to gates of the first and second pass transistors, respectively. A transistor including an oxide semiconductor layer may be provided in the first and second memory circuits.
Inventors:
Uzumasa Munehiro
Takayuki Ikeda
Yoshimoto Kurokawa
Ken Aoki
Takayuki Ikeda
Yoshimoto Kurokawa
Ken Aoki
Application Number:
JP2015183935A
Publication Date:
November 18, 2020
Filing Date:
September 17, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K19/173; H03K3/356
Domestic Patent References:
| JP2011172214A | ||||
| JP2013211845A | ||||
| JP2133028U | ||||
| JP2291720A | ||||
| JP2012515449A | ||||
| JP201438684A | ||||
| JP2014241588A |
Foreign References:
| US6486707 |