Title:
単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法およびそれに用いられる化学気相堆積装置
Document Type and Number:
Japanese Patent JP6795521
Kind Code:
B2
Abstract:
Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
Inventors:
Takuya Nohara
Tatsumi Natsuo
Yoshiki Nishibayashi
Hitoshi Kakutani
Yutaka Kobayashi
Ueda Akihiko
Tatsumi Natsuo
Yoshiki Nishibayashi
Hitoshi Kakutani
Yutaka Kobayashi
Ueda Akihiko
Application Number:
JP2017562857A
Publication Date:
December 02, 2020
Filing Date:
January 18, 2017
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
Sumitomo Electric Hardmetal Corp.
Sumitomo Electric Hardmetal Corp.
International Classes:
C30B29/04; C23C16/27; C30B25/02; C30B25/18; H01L21/205
Domestic Patent References:
| JP9111461A | ||||
| JP2009132948A | ||||
| JP2012131707A |
Attorney, Agent or Firm:
Fukami patent office