Title:
半導体装置、表示装置、および電子機器
Document Type and Number:
Japanese Patent JP6801969
Kind Code:
B2
Abstract:
Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.
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Inventors:
Kenichi Okazaki
Masami Nagasawa
Takahiro Iguchi
Yasushi Hosaka
Junichi Koizuka
Hiroyuki Miyake
Shunpei Yamazaki
Masami Nagasawa
Takahiro Iguchi
Yasushi Hosaka
Junichi Koizuka
Hiroyuki Miyake
Shunpei Yamazaki
Application Number:
JP2016035178A
Publication Date:
December 16, 2020
Filing Date:
February 26, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/336; H01L21/8234; H01L27/06; H01L27/088
Domestic Patent References:
| JP2014089444A | ||||
| JP2013048246A | ||||
| JP2013243349A | ||||
| JP2013149970A |
Foreign References:
| US20160190149 | ||||
| KR1020120135407A |