Title:
半導体装置の製造方法、基板処理装置およびプログラム
Document Type and Number:
Japanese Patent JP6817845
Kind Code:
B2
Abstract:
There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including forming a first layer containing silicon, oxygen, carbon and nitrogen by supplying a first precursor containing silicon, nitrogen and carbon and an oxidant to the substrate, and performing a first modifying process to the first layer at a first temperature to desorb impurities contained in the first layer and densify the first layer; and performing, after forming the first film, a second modifying process to the first film at a second temperature that is not less than the first temperature to desorb impurities contained in the first film and densify the first film.
Inventors:
Atsushi Sano
Kenji Kameda
Yuma Takasawa
Kenji Kameda
Yuma Takasawa
Application Number:
JP2017031299A
Publication Date:
January 20, 2021
Filing Date:
February 22, 2017
Export Citation:
Assignee:
Kokusai electric inc.
International Classes:
H01L21/316; C23C16/42; C23C16/455; H01L21/31
Domestic Patent References:
| JP2015510263A | ||||
| JP2009516906A | ||||
| JP2014514729A |
Foreign References:
| US20160194758 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Aniya Setsuo