Title:
シリコン結晶中の炭素濃度測定方法
Document Type and Number:
Japanese Patent JP6838713
Kind Code:
B2
Abstract:
To provide a method capable of simply measuring carbon concentration on the basis of a level affected by oxygen included in a silicon crystal in a plurality of carbon related levels.SOLUTION: The method for measuring carbon concentration in a silicon crystal comprises: previously calculating a calibration curve between the density of a level E2 of Ec-0.13 eV formed by an H-C-O composite in a plurality of carbon related levels in an n type silicon crystal prepared by the CZ method and the concentration product of carbon and oxygen in the silicon crystal; calculating oxygen concentration in an n type silicon crystal to be measured prepared by the CZ method by an FT-IR method and the like; calculating the density of the level E2 in the silicon crystal to be measured by DLTS measurement; and calculating the carbon concentration in the silicon crystal to be measured on the basis of the oxygen concentration and level E2 density in the silicon crystal to be measured and the calibration curve previously calculated.SELECTED DRAWING: Figure 1
Inventors:
Tobe Toshimi
Application Number:
JP2018020155A
Publication Date:
March 03, 2021
Filing Date:
February 07, 2018
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; H01L21/66
Domestic Patent References:
| JP2017191800A | ||||
| JP2016108159A | ||||
| JP2015101529A | ||||
| JP2014207369A | ||||
| JP2016108160A | ||||
| JP2013112570A |
Attorney, Agent or Firm:
Ryuji Harikawa
Kengo Yamauchi
Kengo Yamauchi