Title:
酸化物スパッタリングターゲット
Document Type and Number:
Japanese Patent JP6859837
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide sputtering target having a sufficiently low resistivity, capable of performing stably DC (direct current) sputtering, and capable of depositing an oxide film having a smooth surface even when being heated.SOLUTION: An oxide sputtering target comprising a sintered body of oxides containing Nb and Zr as metal elements, has an atomic ratio of Nb of 30 atom% or more and 85 atom% or less to the total metal elements, and a residue comprising Zr and inevitable impurities, and also has Zr oxide particles mainly composed of Zr, and Nb oxide particles mainly composed of Nb, in which the maximum length of the Zr oxide particles is 50 μm or less, and a specific resistance value is 1 Ω cm or less.SELECTED DRAWING: None
Inventors:
Sohei Nonaka
Takeshi Otomo
Yuya Rikuta
Takeshi Otomo
Yuya Rikuta
Application Number:
JP2017093116A
Publication Date:
April 14, 2021
Filing Date:
May 09, 2017
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; C04B35/01; G11B5/738; G11B5/851
Domestic Patent References:
| JP2001032064A | ||||
| JP2015166141A | ||||
| JP10317131A | ||||
| JP2015214437A | ||||
| JP2006299307A | ||||
| JP2016056392A |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Masatake Shiga
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Masatake Shiga