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Patent Searching and Data


Title:
ハイサイドゲートドライバ
Document Type and Number:
Japanese Patent JP6877597
Kind Code:
B2
Abstract:
The present invention provides a high-side gate driver, comprising: first and second current mirrors (Ip1, In1), a first N-channel transistor (Mn1), first and second switch circuits (Mp1, Mn2), first and second first-type diodes (d1, d2), and a first second-type diode (d3). The first switch circuit is arranged between an output end of the first current mirror and a source of the first N-channel transistor; the second switch circuit is arranged between a drain of the first N-channel transistor and an input end of the second current mirror. An anode and a cathode of the first first-type diode are arranged to be connected to the source of the first N-channel transistor and a cathode of the second first-type diode; an anode of the second first-type diode is arranged to be connected to an output end of the second current mirror; an anode and a cathode of the first second-type diode are arranged to be connected to ground and the cathode of the second first-type diode. Using the high-side gate driver, a negative voltage requirement of a transistor gate pin when electrified and not electrified can be met, with no need to additionally provide a current-limiting resistance.

Inventors:
Zhong Zhong
Tibin Din
Minjiang
Application Number:
JP2019571955A
Publication Date:
May 26, 2021
Filing Date:
June 07, 2018
Export Citation:
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Assignee:
ROBERT BOSCH GMBH
International Classes:
H01L21/822; H01L27/04; H01L27/06; H03K17/0812; H03K17/687
Domestic Patent References:
JP2004047937A
JP2008154400A
JP2016208406A
JP2006522489A
JP2012094565A
JP2007214158A
Foreign References:
US20070290738
US20140268441
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Morita Taku
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima