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Title:
データのリフレッシュの方法、半導体ウェハ、電子機器
Document Type and Number:
Japanese Patent JP6899223
Kind Code:
B2
Abstract:
A method for performing a refresh operation on a memory cell efficiently is provided. A semiconductor device including a normal memory cell and a trigger memory cell that determines whether the refresh operation is performed or not is used. Specific data is written to the trigger memory cell, and the data is read from the trigger memory cell at predetermined timing. When the read data agrees with the written specific data, no special operation is performed. When the read data does not agree with the written specific data, a refresh operation is performed automatically.

Inventors:
Takahiko Ishizu
Teru Tamura
Application Number:
JP2017011097A
Publication Date:
July 07, 2021
Filing Date:
January 25, 2017
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C11/406; G11C11/405; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
JP5144261A
JP2002157898A
JP5254340A



 
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