Title:
半導体モジュールおよび電力変換装置
Document Type and Number:
Japanese Patent JP6912560
Kind Code:
B2
Abstract:
An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.
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Inventors:
Shota Morisaki
Tamako Miko
Junichi Nakajima
Daisuke Oyaku
Tamako Miko
Junichi Nakajima
Daisuke Oyaku
Application Number:
JP2019513574A
Publication Date:
August 04, 2021
Filing Date:
April 11, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H02M7/48; H01L25/07; H01L25/18
Domestic Patent References:
| JP2005261035A | ||||
| JP2015213408A | ||||
| JP2003142689A | ||||
| JP2009148077A | ||||
| JP2013012560A |
Attorney, Agent or Firm:
Fukami patent office