Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7456268
Kind Code:
B2
Abstract:
To provide a semiconductor device capable of improving reliability, and to provide a method of manufacturing the same.SOLUTION: A temperature sensing part 13 is configured by horizontal-type polysilicon diodes 80a and 80b laminated on an interlayer insulating film 40 on the front face of a semiconductor substrate 10. The polysilicon diodes 80a and 80b are connected in parallel to each other by being laminated so that anode regions are adjacent to each other in a depth direction and cathode regions are adjacent to each other in the depth direction. A crystal grain size, as well as a planar grain size and a cross-sectional grain size, of polysilicon crystal grain of the upper polysilicon diode 80b is larger than a crystal grain size of polysilicon crystal grain of the lower polysilicon diode 80a, and thereby crystal grain boundaries 84b of the polysilicon crystal grain are less.SELECTED DRAWING: Figure 4
Inventors:
Yasuyuki Hoshi
Application Number:
JP2020079838A
Publication Date:
March 27, 2024
Filing Date:
April 28, 2020
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/06; H01L29/12
Domestic Patent References:
| JP2019087635A | ||||
| JP6260303A |
Foreign References:
| WO2015004774A1 | ||||
| WO2015087483A1 | ||||
| US20160079442 |
Attorney, Agent or Firm:
Akinori Sakai
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