Title:
炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7476947
Kind Code:
B2
Abstract:
To provide a manufacturing method of a silicon carbide semiconductor device capable of removing source droop on trench sidewalls and suppressing DS leak without lowering mobility and a silicon carbide semiconductor device.SOLUTION: In a manufacturing method of a silicon carbide semiconductor device, first, a first conductive type first semiconductor layer 2 having a lower impurity concentration than a semiconductor substrate 1 is formed on the front surface of the first conductive type semiconductor substrate. Next, a second conductivity type second semiconductor layer 3 is selectively formed on the surface of the first semiconductor layer 2 opposite to the semiconductor substrate 1 side. Next, a first conductivity type first semiconductor region 7 is selectively formed on a surface layer of the second semiconductor layer 3 opposite to the semiconductor substrate 1 side. Next, a trench 18 penetrating through the second semiconductor layer 3 and the first semiconductor region 7 and reaching the first semiconductor layer 2 is formed. Next, hydrogen annealing is performed on the trench 18. Next, CDE is performed on the trench after the hydrogen annealing.SELECTED DRAWING: Figure 11
Inventors:
Masakazu Baba
Application Number:
JP2022198266A
Publication Date:
May 01, 2024
Filing Date:
December 12, 2022
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/336; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP2014053595A | ||||
| JP2006351744A | ||||
| JP2008004686A | ||||
| JP2010147380A | ||||
| JP2018019045A | ||||
| JP2002231945A | ||||
| JP2008306003A |
Attorney, Agent or Firm:
Akinori Sakai